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Journal of Wide Bandgap Materials
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Diffusion of Boron into Polycrystalline Diamond Films Using the Electric Field Enhanced Diffusion (EFED) Technique

Alejandro Suarez

University of Missouri-Columbia, Columbia, MO 65211, USA

Mark A. Prelas

University of Missouri-Columbia, Columbia, MO 65211, USA, prelasm{at}missouri.edu

Tushar K. Ghosh

University of Missouri-Columbia, Columbia, MO 65211, USA

Robert V. Tompson

University of Missouri-Columbia, Columbia, MO 65211, USA

Sudarshan K. Loyalka

University of Missouri-Columbia, Columbia, MO 65211, USA

William H. Miller

University of Missouri-Columbia, Columbia, MO 65211, USA

Dabir S. Viswanath

University of Missouri-Columbia, Columbia, MO 65211, USA

The diffusion of boron into polycrystalline diamond films was carried out at 1000°C. Experiments were conducted at different electric field strengths through a diamond-boron-diamond (DBD) matrix for different times at a vacuum of 686 Torr. During the experiments hydrogen was flowing into the reactor at a rate of 11 sccm. The results showed that the best conditions to diffuse boron into diamond occurred at 200 V and 8 h. The diffusion coefficient of boron in diamond was calculated using the experimental data and was found to be 3.50 X 10-14 cm2/s at 1000°C. The diamond films showed a dramatic reduction in electrical resistivity from more than 1013{Omega} cm to 50 {Omega} cm.

Key Words: polycrystalline diamond • semiconductor diamond • p-type semiconductor processing • wide-band-gap materials

Journal of Wide Bandgap Materials, Vol. 10, No. 1, 15-27 (2002)
DOI: 10.1177/152451102028016
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