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Raman Investigations of Be-Doped Cubic Boron Nitride

The Institute of Solid State & Semiconductors Physics, National Academy of Science of Belarus 17, P. Brovki Street, Minsk BY-220072, Republic of Belarus, ifttpanb{at}ifttp.bas-net.by

T. Taniguchi

The National Institute of the Materials Science, Advanced Laboratory, Tsukuba, Japan

K. Watanabe

The National Institute of the Materials Science, Advanced Laboratory, Tsukuba, Japan

H. Kanda

The National Institute of the Materials Science, Advanced Laboratory, Tsukuba, Japan

First two broad bands are discovered in Raman spectra of Be-doped cubic boron nitride (single crystals, powders and polycrystals) at 215 and 535 cm 1(¹/4 100-120 cm ¹) and in very weak intensity were found on (II II II) facet of very well shaped undoped cBN single crystals as well. It is possible to expect the appearance of the bands in higher intensity preferably on (II II II) facets of Be-doped crystals and as a consequence an observation of "zoned" Be-doped crystals. The nature of the broad bands was investigated in terms of "boson" peak. The broad band at 535 cm ¹ only has been shown to be suspicious as "boson"-like and its nature can be connected with very small disorders (less than 1 nm) of uncertain origin in cBN crystal lattice. Additional measurements are in line to provide real evidence of this. The "very low-frequency" band origin is unclear. Assuming vibration nature of the both bands it is possible that clusters of nitrogen or boron atoms vibrate in cBN in acoustic regime. Atoms number in clusters can follow average disorders sizes defined in this work. The known structures following TO and LO phonon lines in cBN Raman spectra are connected with boron sublattice. Probably, intensities of the broad bands at 215 and 535 cm ¹ in cBN Raman spectra can be used as tool for distinguishing Be-doped and intrinsicmaterial.

Key Words: cubic boron nitride • Raman spectrum • beryllium • vibrational nature • "boson-like"nature • disorders

Journal of Wide Bandgap Materials, Vol. 10, No. 1, 53-70 (2002)
DOI: 10.1177/152451102028015


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