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Journal of Wide Bandgap Materials
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Influence of Resident Time and Proportion of Reactive Gas on the Growth of Diamond Films

Ning Deng

Institute of Microelectronics, Tsinghua University, Beijing, 100084, P.R. China, ningdeng{at}tsinghua.edu.cn

Changchun Zhu

Department of Microelectronics, Xi’an Jiaotong University, Shaanxi, Xi’an, 710049, P.R. China

The influence of flow rate and proportion of reactive gas and pressure in the reactive chamber on the growth of diamond films fabricated by plasma enhanced chemical vapor deposition (PECVD) has been studied systematically. It is found that these parameters influence the growth process as whole rather than individually. We define a new parameter (G), the product of resident time and proportion of reactive gas, to optimize the fabrication process. We find that high quality diamond films can be fabricated at feasible speed only at GCH > 0.495 ms and GH > 15 ms. It can be deduced that diamond films with different ratio of SP2 bonds will be fabricated by controlling GH in the range of 16-40 ms to meet different applications.

Key Words: diamond films • plasma enhanced chemical vapor deposition • growth

Journal of Wide Bandgap Materials, Vol. 10, No. 1, 71-75 (2002)
DOI: 10.1177/152451102028017
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