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Journal of Wide Bandgap Materials
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MOVPE Deposition of AlAs/In0.53Ga0.47As/InP Resonant Tunneling Heterostructure Performing High PVR Parameter

K. Kosiel

Institute of Electronic Materials Technology, ul. Wólczynska 133, 01-919 Warsaw, Poland, Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warsaw, Poland, kosiel_k{at}inter.waw.pl

L. Dobrzanski

Institute of Electronic Materials Technology, ul. Wólczynska 133, 01-919 Warsaw, Poland

B. Majkusiak

Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warsaw, Poland

A. Jasik

Institute of Electronic Materials Technology, ul. Wólczynska 133, 01-919 Warsaw, Poland

Resonant tunneling AlAs/In0.53Ga0.47As/InP heterostructures have been grown by Low Pressure Metalorganic Vapor Phase Epitaxy (LP MOVPE). Peak-to-valley current density ratio (PVR) of processed Resonant Tunneling Diodes is close to 12 at room temperature.

Journal of Wide Bandgap Materials, Vol. 9, No. 1-2, 93-100 (2001)
DOI: 10.1106/152451102025833
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